CY7C401/CY7C403
CY7C402/CY7C404
2
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65
°C to +150°C
Ambient Temperature with
Power Applied............................................. –55
°C to +125°C
Supply Voltage to Ground Potential ............... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State ............................................... –0.5V to +7.0V
DC Input Voltage............................................ –3.0V to +7.0V
Power Dissipation ..........................................................1.0W
Output Current, into Outputs (LOW)............................ 20 mA
Static Discharge Voltage ........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current ..................................................... >200 mA
Operating Range
Range
Ambient
Temperature
VCC
Commercial
0
°C to +70°C
5V
±10%
Military[1]
–55
°C to +125°C
5V
±10%
Electrical Characteristics Over the Operating Range (Unless Otherwise Noted)[2]
7C40X–10, 15, 25
Parameter
Description
Test Conditions
Min.
Max.
Unit
VOH
Output HIGH Voltage
VCC = Min., IOH = –4.0 mA
2.4
V
VOL
Output LOW Voltage
VCC = Min., IOL = 8.0 mA
0.4
V
VIH
Input HIGH Voltage
2.0
6.0
V
VIL
Input LOW Voltage
–3.0
0.8
V
IIX
Input Leakage Current
GND
≤ V
I ≤ VCC
–10
+10
µA
VCD
[3]
Input Diode Clamp Voltage[3]
IOZ
Output Leakage Current
GND
≤ V
OUT ≤ VCC, VCC = 5.5V
Output Disabled (CY7C403 and CY7C404)
–50
+50
µA
IOS
Output Short Circuit Current[4]
VCC = Max., VOUT = GND
–90
mA
ICC
Power Supply Current
VCC = Max., IOUT = 0 mA
Commercial
75
mA
Military
90
mA
Capacitance[5]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = 4.5V
5
pF
COUT
Output Capacitance
7
pF
Notes:
1.
TA is the “instant on” case temperature.
2.
See the last page of this specification for Group A subgroup testing information.
3.
The CMOS process does not provide a clamp diode. However, the FIFO is insensitive to –3V dc input levels and –5V undershoot pulses of less than 10 ns
(measured at 50% output).
4.
For test purposes, not more than one output at a time should be shorted. Short circuit test duration should not exceed 30 seconds.
5.
Tested initially and after any design or process changes that may affect these parameters.
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