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FTA1275 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FTA1275 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 1 page ![]() SEMICONDUCTOR TECHNICAL D ATA FTA1275 2011. 10. 31 1/1 Revision No : 0 1. EMITTER 2. COLLECTOR 3. BASE FTA1275 TRANSISTOR (PNP) FEATURES High Voltage Large Continuous Collector Current Capability Complementary to FTC3228 MAXIMUM RATINGS (Ta=25 unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -1mA,IE=0 -160 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -160 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -6 V Collector cut-off current ICBO VCB=-150V,IE=0 -1 μA Emitter cut-off current IEBO VEB=-6V,IC=0 -1 μA DC current gain hFE VCE=-5V, IC=-200mA 60 320 Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA -1.5 V Base-emitter voltage VBE VCE=-5V, IC=-5mA -0.45 -0.75 V Collector output capacitance Cob VCB=-10V,IE=0, f=1MHz 35 pF Transition frequency fT VCE=-5V,IC=-200mA 15 MHz CLASSIFICATION OF hFE Y O R K N A R RANGE 0 2 3 - 0 6 1 0 0 2 - 0 0 1 0 2 1 - 0 6 t i n U e u l a V r e t e m a r a P l o b m y S VCBO V 0 6 1 - e g a t l o V e s a B - r o t c e ll o C VCEO V 0 6 1 - e g a t l o V r e t t i m E - r o t c e ll o C VEBO V 6 - e g a t l o V e s a B - r e t t i m E IC A 1 - t n e r r u C r o t c e ll o C PC W 5 7 . 0 n o i t a p i s s i D r e w o P r o t c e ll o C RθJA Thermal Resistance From Junction To Ambient 167 ℃/W Tj 0 5 1 e r u t a r e p m e T n o i t c n u J ℃ Tstg 0 5 1 + ~ 5 5 - e r u t a r e p m e T e g a r o t S ℃ TO-92L DIM MILLIMETERS A B C D F G H J L 8.2 MAX 5.1 MAX 1.58 MAX 0.7 TYP 1.27 TYP 2.54 TYP 14.20 MAX D G F E E 0.55 MAX B 0.45 MAX 4.10 MAX L C 1 2 3 |
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