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DF100AA120 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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DF100AA120 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 DF100AA120 Three Phases Rectifying Bridge Module FEATURES · The chips are electrically insulated from bosom plate ,2500V AC voltage · High surge current · Low forward voltage drop · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · AC, DC Motor Drive/AVR/Switching for three phase rectification ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VRRM Repetitive Peak Reverse Voltage Tp=10ms 1200 V IO Output Current (D.C) TC=100℃ 100 A IFSM Surge Forward Current Half-sine wave,10ms, VR=0.6VRRM 1800 A I2t I2t for fusing 16500 A2S Viso Maximum Power Dissipation 50Hz,R.M.S,t=1ms,Iiso=1mA(max) 2500 V TJ Junction Temperature -40~125 ℃ Tstg Storage Temperature Range -40~125 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.1 ℃ /W |
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