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MJE1320 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJE1320 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor MJE1320 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BVCBO Collector-Base Breakdown Voltage IC=0.1mA; IE=0 1500 V BVCEO Collector-Emitter Breakdown Voltage IC=50mA; RBE=∞ 800 V BVEBO Emitter-Base Breakdown Voltage IE=0.1mA;IC=0 9 V VCE(sat) -1 Collector-Emitter Saturation Voltage IC=1A; IB=0.5A 1.0 V VCE(sat) -2 Collector-Emitter Saturation Voltage IC=2A; IB=1A 2.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC=1A; IB=0.5A 1.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC=2A; IB=1A 2.8 V ICBO Collector Cutoff Current VCB= 1500V; IE= 0 0.25 mA IEBO Emitter Cutoff Current VEB= 9V; IC=0 0.25 mA hFE-1 DC Current Cain IC= 2A ; VCE= 5V 2.5 hFE-2 DC Current Cain IC= 1A ; VCE= 5V 3 |
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