NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space.

Bias Resistor Transistor

SEMICONDUCTOR

TECHNICAL DATA

DTC114T

1

2

3

TO-92M

DIM MILLIMETERS

A

B

C

D

E

F

G

3.25 MAX

4.20 MAX

0.48 MAX

1.52 0.1

1.27

15.30 0.20

0.76

45

0.51 MAX

H

J

E

E

H

J

C

K

0.25

K

B

+

_

+

_

1. EMITTER(GND)

2. COLLECTOR(Output)

3. BASE(Input)

Absolute maximum ratings (Ta=25℃)

Parameter

Symbol

Value

Unit

Supply voltage

V

0

5

Input voltage

V

-5 ~30

0

0

1

Output current

0

0

1

mA

Power dissipation

Pd

300

mW

Junction temperature

0

5

1

℃

Storage temperature

0

5

1

~

5

5

-

g

t

s

T

℃

2012.01. 16

1/2

Revision No : 0

B : Base

C : Collector

E : Emitter

B

E

C

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

50

V

Collector-emitter breakdown voltage

50

V

Emitter-base breakdown voltage

5

V

Collector cut-off current

0.5

µA

Emitter cut-off current

0.5

µA

DC current gain

100

300

600

Collector-emitter saturation voltage

0.3

V

Transition frequency

250

MHz

Imput resistor

7

10

13

KΩ

Electrical Characteristics(Ta=25℃ unless otherwise specified)