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DTA219 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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DTA219 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 3 page ![]() 2011. 11. 15 1/3 SEMICONDUCTOR TECHNICAL DATA DTA219 Revision No : 0 SOT-23 GND OUT IN PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping L3 4.7 10 3000/Tape & Reel • We declare that the material of product compliance with RoHS requirements. 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. Inverter, Interface, Driver Features • • Applications DTA219 Absolute maximum ratings (Ta=25 °C) Limits Parameter Symbol V V mA mW °C °C Unit VCC VI IO IC(Max.) Pd Tj Tstg Supply voltage Input voltage Output current Power dissipa ion Junction temperature Storage temperature 200 −50 −20 to +7 −100 −100 150 −55 to +150 3 COLLECTOR 2 EMITTER 1 BASE R1 R2 Electrical characteristics (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Conditions �Characteristics of built-in transistor VI(off) VI(on) VO(on) II IO(off) R1 GI R2/R1 fT − −2.5 − − − 3.29 30 1.7 − − − −0.1 − − 4.7 − 2.1 250 −0.3 − −0.3 −1.8 −0.5 6.11 − 2.6 − V VCC=−5V, IO =−100 µA VO =−0.3V, IO=−20mA IO/II=−10mA/−0.5mA VI=−5V VCC=−50V, VI =0V VO=−5V, IO=−10mA VCE=−10V, IE =5mA, f=100MHz � V mA µA kΩ − − − − MHz Input voltage Output voltage Input current Output current Input resistance DC current gain Resistance ratio Transition frequency |
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