NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space.

Bias Resistor Transistor

SEMICONDUCTOR

TECHNICAL DATA

DTC124E

IN

GND

OUT

GND

OUT

R2

R1

IN 3

2

1

1

2

3

TO-92M

DIM MILLIMETERS

A

B

C

D

E

F

G

3.25 MAX

4.20 MAX

0.48 MAX

1.52 0.1

1.27

15.30 0.20

0.76

45

0.51 MAX

H

J

E

E

H

J

C

K

0.25

K

B

+

_

+

_

1. EMITTER(GND)

2. COLLECTOR(Output)

3. BASE(Input)

Parameter

Symbol

Value

Unit

Supply voltage

V

0

5

Input voltage

V

0

4

+

~

0

1

-

30

Output current

0

0

1

mA

Power dissipation

Pd

300

mW

Junction temperature

0

5

1

℃

Storage temperature

0

5

1

~

5

5

-

g

t

s

T

℃

Electrical characteristics (Ta=25

Parameter

Symbol

Min.

Typ

Max.

Unit

Conditions

V

0.5

Input voltage

3

V

Output voltage

Input current

Vi=5V

Output current

Vcc=50V ,Vi=0

DC current gain

Input resistance

㏀

Resistance ratio

2

1

0.8

Transition frequency

Vo=10V ,Io=5㎃,f=100㎒

2012.01.30

1/2

Revision No : 0

Vo

33

15.4

22

28.6

Io

V

0.3

0.1

㎃

0.36

㎂

0.5

㎒

250