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MBRS1035 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBRS1035 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.isc.com isc & iscsemi is registered trademark 1 Schottky Barrier Rectifier MBRS1035 FEATURES · Schottky barrier chip · Low Power Loss/High Efficiency · High Operating Junction Temperature · Low Forward Voltage · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · For use in high frequency rectifier of switching mode Power supplies, freewheeling diodes, DC-to-DC converters Or polarity protection application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 35 V IF(AV) Average Rectified Forward Current 10 A IFSM Non-repetitive Peak Surge Current 8.3 ms Single Half Sine-wave Superimposed on Rated Load 120 A TJ Junction Temperature -65~175 ℃ Tstg Storage Temperature Range -65~175 ℃ |
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