CD909 datasheet(2/3 Pages) CDIL

2 / 3 page

Continental Device India Limited

Data Sheet

Page 2 of 3

Total power dissipation up to TC = 25°C

Ptot

max.

75 W

Junction temperature

max. 150 ºC

Storage temperature

Tstg

–65 to +150 ºC

CHARACTERISTICS

Tamb = 25°C unless otherwise specified

Collector cutoff current

IE = 0; VCB = 100 V

ICBO

max. 100 µA

Emitter cut-off current

IC = 0; VEB = 5V

IEBO

max. 1000 µA

Breakdown voltages

IC = 1 mA; IB = 0

VCEO

min.

90 V

IC = 1 mA; IE = 0

VCBO

min.

100 V

IE = 1 mA; IC = 0

VEBO

min.

6.0 V

Saturation voltages

IC = 4 A; IB = 0.5 A

VCEsat

max.

1.0 V

VBEsat

max.

1.5 V

Base emitter on voltage

IC = 4A; VCE = 4V

VBE(on)

max.

1.5 V

D.C. current gain

IC = 1 A; VCE = 4 V

hFE

min.

max. 400

IC = 10 A; VCE = 4 V

hFE

min.

Transition frequency

IC = 0.3 A; VCE = 3 V

min.

3 MHz

Output capacitance

IE = 0; VCB = 10V

typ.

100 pF

Second breakdown collector current

with base forward biased (non-repetitive)

VCE = 21.5 V; t = 50ms

IS/b

typ.

3.5 A

CD909

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