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2SA1006B Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SA1006B
Description  isc Silicon PNP Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SA1006B Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
2SA1006B
DESCRIPTION
·
Good Linearity of hFE
·
High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -250Vdc (Min)
·
Wide Area of Safe Operation
·
Complement to Type 2SC2336B
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Adudio frequency power amplifier
·
High frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-250
V
VCEO
Collector-Emitter Voltage
-250
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1.5
A
ICM
Collector Current-Peak
-3.0
A
PC
Collector Power Dissipation@ Ta=25℃
1.5
W
Total Power Dissipation@ TC=25℃
25
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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