2SC5636 datasheet(1/4 Pages) ISAHAYA

Part #	2SC5636

Description	FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	ISAHAYA [Isahaya Electronics Corporation]

Direct Link	http://www.idc-com.co.jp

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1 / 4 page

DESCRIPTION

FEATURE

APPLICATION

・Super mini package for easy mounting.

・High gain bandwidth product.

fT=8.0GHz

For TV tuners,high frequency amplifier,celluar phone

system.

・High gain,low noise.

・Can operate at low voltage.

Mitsubishi 2SC5636 is a super mini package resin sealed

silicon NPN epitaxial transistor.It is designed for high

frequency application.

OUTLINE DRAWING

Unit:mm

TERMINAL CONNECTOR

1

: BASE

2

: EMITTER

3

: COLLECTOR

JEITA:SC-90

MAXIMUM RATINGS (Ta=25℃)

VCBO

I C

PC

Tj

Tstg

15

50

+125

-55~+125

V

mA

mW

℃

Symbol

Parameter

Collector to Base voltage

Collector current

Collector dissipation

Junction temperature

Storage temprature

Ratings

Unit

VEBO

V

Emitter to Base voltage

VCEO

6

V

Collector to Emitter voltage

100

1.5

ELECTRICAL CHARACTERISTICS (Ta=25℃)

Symbol

Parameter

Test conditions

Limits

Min

Typ

Max

Unit

I CBO

f T

Cob

NF

VCB=10V, I E=0mA

VCE=5V, I E=10mA

VCB=5V, I E=0mA, f =1MHz

VCE=5V, I C=10mA, f =1GHz

VCE=5V, I C=5mA, f =1GHz

Gain bandwidth product

Collector output capacitance

Insertion power gain

Noise figure

I EBO

VEB=1V, IC=0mA

Emitter cut off current

hFE

VCE=5V, I C=10mA

DC forward current gain

｜S21｜2

Collector cut off current

1.0

50

250

8.0

1.0

9.0

12.0

1.4

μA

GHz

pF

dB

0.8

0.4

1.6

1

2

3

5.0

2SC5636

FOR HIGH FREQUENCY AMPLIFY APPLICATION

SILICON NPN EPITAXIAL TYPE

〈SMALL-SIGNAL TRANSISTOR〉

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