Electronic Components Datasheet Search
  English  ▼

X  

Preview PDF HTML

BC546 Datasheet(PDF) 2 Page - Silicon Supplies

Part # BC546
Description  NPN Transistor Bare Die
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SS [Silicon Supplies]
Direct Link  https://siliconsupplies.com/
Logo SS - Silicon Supplies

BC546 Datasheet(HTML) 2 Page - Silicon Supplies

  BC546 Datasheet HTML 1Page - Silicon Supplies BC546 Datasheet HTML 2Page - Silicon Supplies BC546 Datasheet HTML 3Page - Silicon Supplies BC546 Datasheet HTML 4Page - Silicon Supplies  
Zoom Inzoom in Zoom Outzoom out
 2 / 4 page
background image
 
 
 
 
 
 
 
 
 
P
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
Page 2 of 4 
www.siliconsupplies.com
ARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
V(BR)CBO
IC = 50µA, IE = 0
50
-
-
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 1mA, IB = 0
45
-
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = 50µA, IC = 0
6
-
-
V
Collector Cut-off Current
ICBO
VCB = 30V, IE = 0
-
-
15
nA
ON CHARACTERISTICS
BC546
110
-
800
-
BC546A
110
-
220
-
BC546B
200
290
450
-
BC546C
VCE = 5V, IC = 2mA
420
-
800
-
VCE = 5V, IC = 10µA
-
90
-
-
BC546A
VCE = 5V, IC = 100mA
-
120
-
-
VCE = 5V, IC = 10µA
-
150
-
-
Forward-Current Transfer Ratio
1
hFE
BC546B
VCE = 5V, IC = 100mA
-
180
-
-
IC = 10mA, IB = 0.5mA
-
90
250
mV
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 100mA, IB = 5mA
-
200
600
mV
IC = 10mA, IB = 0.5mA
-
700
-
mV
Base-Emitter Saturation Voltage
VBE(sat)
IC = 100mA, IB = 5mA
-
900
-
mV
IC = 2mA, VCE = 5V
580
660
700
mV
Base-Emitter On Voltage
VBE(on)
IC = 10mA, VCE = 5V
-
-
720
mV
SMALL SIGNAL CHARACTERISTICS
2
Transition Frequency
3
fT
VCE = 5V, IC = 10mA, f = 100MHz
150
300
-
MHz
BC546
125
-
900
BC546A
Electrical Characteristics T
A = 25°C unless otherwise stated
Absolute Maximum Ratings T
A = 25°C unless otherwise stated
Rev 1.0
08/01/19
NPN Transistor Bare Die ‐ BC546
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
65
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
100
mA
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
-55 to 150
°C
125
220
260
Small-Signal Current Gain
hfe
BC546B
VCE= 5V, IC = 2mA,
f = 1 kHz
240
330
500
Output Capacitance
Cobo
VCB = 10V, IE = 0, f = 1MHz
-
3.5
6
pF
Input Capacitance
Cibo
VBE = 10V, IC = 0, f = 1MHz
-
9
-
pF
Noise Figure
NF
VCE = 5V, IC = 200µA,
f = 1KHz, RG=2KΩ
-
2
10
dB
 
Note 1: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%
Note 2: Not production testing in die form. Characterized by chip design and tested in package
Note 3: fT is defined as the frequency at which |hfe| extrapolates to unity.



Html Pages

1 2 3 4


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com