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40TPS08A Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 40TPS08A
Description  isc Thyristors
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

40TPS08A Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  40TPS08A Datasheet HTML 1Page - Inchange Semiconductor Company Limited 40TPS08A Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Thyristors
40TPS08A
DESCRIPTION
·
Long-term stability
·
Thyristor for line frequency
·
Planar passivated chip
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Be used with Vishay HPP input diodes, switches and
output rectifiers which are available in identical package
outlines.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM
Repetitive peak off-state voltage
1200
V
VRRM
Repetitive peak reverse voltage
1200
V
IT(AV)
Average forward current
@Tc=79℃
35
A
IT(RMS)
RMS on-state current
55
A
ITSM
Surge non-repetitive on-state current @tp=10ms
500
A
PG(AV)
Average gate power dissipation
1
W
Tj
Operating junction temperature
-40~125
℃
Tstg
Storage temperature
-40~150
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
IRRM
Repetitive peak reverse current
VRM=VRRM
VDM=VDRM
Tj=25℃
Tj=125℃
0.5
10
mA
IDRM
Repetitive peak off-state current
VTM
On-state voltage
ITM= 110A
1.85
V
IGT
Gate-trigger current
VD=12V RL=33Ω
150
mA
VGT
Gate-trigger voltage
VD=12V RL=33Ω
2.5
V
Rth(j-c)
Thermal resistance
Junction to case
0.6
℃
/W


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