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D291S45T Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # D291S45T
Description  Fast Recovery Diode
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

D291S45T Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  D291S45T Datasheet HTML 1Page - Inchange Semiconductor Company Limited D291S45T Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
D291S45T
Fast Recovery Diode
FEATURES
·
Full diffusion process,flat type ceramic tube package
·
Double sides cooling,High current
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
High power converters
·
AC/DC switching
·
Phase controlled rectifying
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VR
Repetitive Peak Reverse Voltage
4500
V
IF(AV)
Average Forward Current
TC=85℃
290
A
IFSM
Surge Forward Current
Tj=125℃
4500
A
TJ
Junction Temperature
-40~125
℃
Tstg
Storage Temperature Range
-40~140
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.11
℃
/W


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