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TS13003CT Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TS13003CT Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 3 page  TS13003 1-3 2003/12 rev. A TS13003 High Voltage NPN Transistor Pin assignment: 1. Emitter 2. Collector 3. Emitter BVCEO = 400V BVCBO = 700V Ic = 1.5A VCE (SAT), = 0.8V @ Ic / Ib = 0.5A / 0.1A Features High voltage. High speed switching Structure Silicon triple diffused type. NPN silicon transistor Ordering Information Part No. Packing Package TS13003CT TO-92 TS13003CK Bulk TO-126 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 700V V Collector-Emitter Voltage VCEO 400V V Emitter-Base Voltage VEBO 9 V DC 1.5 Collector Current Pulse IC 3 A TO-92 0.6 Collector Power Dissipation TO-126 PD 20 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: 1. Single pulse, Pw = 5mS, Duty <= 10% Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC = 5mA, IB = 0 BVCBO 700 V Collector-Emitter Breakdown Voltage IC = 5mA, IE = 0 BVCEO 400 V Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 BVEBO 9 V Collector Cutoff Current VCB = 700V, IE = 0 ICBO 100 uA Emitter Cutoff Current VEB = 9V, IC = 0 IEBO 10 uA Collector-Emitter Saturation Voltage IC / IB = 1.5A / 0.5A IC / IB = 0.5A / 0.1A VCE(SAT)1 VCE(SAT)2 3 0.5 V DC Current Gain VCE = 2V, IC = 0.5A hFE 8 40 Frequency VCE = 10V, IC = 0.1A fT 4 MHz Output Capacitance VCB = 10V, f = 0.1MHz Cob 21 pF Turn On Time tON 1.1 uS Storage Time tSTG 4 uS Fall Time VCC = 125V, IC = 1A, IB1 = 0.2A, IB2 = - 0.2A, RL = 125ohm tf 0.7 uS Note : pulse test: pulse width <=5mS, duty cycle <=10% TO-126 |
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