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BSM30GP60 Datasheet(PDF) 2 Page - eupec GmbH |
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BSM30GP60 Datasheet(HTML) 2 Page - eupec GmbH |
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2 / 12 page  Technische Information / Technical Information IGBT-Module IGBT-Modules BSM30GP60 Modul Isolation/ Module Isolation Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate VISOL 2,5 kV Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Diode Gleichrichter/ Diode Rectifier min. typ. max. Durchlaßspannung forward voltage Tvj = 150°C, I F = 30 A VF - 1,1 1,15 V Schleusenspannung threshold voltage Tvj = 150°C V(TO) - - 0,8 V Ersatzwiderstand slope resistance Tvj = 150°C rT - - 10,5 m Ω Sperrstrom reverse current Tvj = 150°C, V R = 1600 V IR -2 - mA Modul Leitungswiderstand, Anschlüsse-Chip lead resistance, terminals-chip TC = 25°C RAA’+CC’ - 8 - m Ω Transistor Wechselrichter/ Transistor Inverter min. typ. max. Kollektor-Emitter Sättigungsspannung VGE = 15V, Tvj = 25°C, IC = 30 A VCE sat - 1,95 2,45 V collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 30 A - 2,2 - V Gate-Schwellenspannung gate threshold voltage VCE = VGE, Tvj = 25°C, IC = 0,7 mA VGE(TO) 4,5 5,5 6,5 V Eingangskapazität input capacitance f = 1MHz, Tvj = 25°C VCE = 25 V, VGE = 0 V Cies - 1,6 - nF Kollektor-Emitter Reststrom VGE = 0V, Tvj = 25°C, VCE = 600 V ICES - 1,0 500 µA collector-emitter cut-off current VGE = 0V, Tvj =125°C, VCE = 600 V - 1,2 - mA Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE =20V, Tvj =25°C IGES - - 300 nA Einschaltverzögerungszeit (ind. Last) IC = INenn, VCC = 300 V turn on delay time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 33 Ohm td,on -50 - ns VGE = ±15V, Tvj = 125°C, RG = 33 Ohm - 50 - ns Anstiegszeit (induktive Last) IC = INenn, VCC = 300 V rise time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 33 Ohm tr -50 - ns VGE = ±15V, Tvj = 125°C, RG = 33 Ohm - 50 - ns Abschaltverzögerungszeit (ind. Last) IC = INenn, VCC = 300 V turn off delay time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 33 Ohm td,off - 250 - ns VGE = ±15V, Tvj = 125°C, RG = 33 Ohm - 270 - ns Fallzeit (induktive Last) IC = INenn, VCC = 300 V fall time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 33 Ohm tf -30 - ns VGE = ±15V, Tvj = 125°C, RG = 33 Ohm - 40 - ns Einschaltverlustenergie pro Puls IC = INenn, VCC = 300 V turn-on energy loss per pulse VGE = ±15V, Tvj = 125°C, RG = 33 Ohm Eon - 1,4 - mWs L S = 75 nH Abschaltverlustenergie pro Puls IC = INenn, VCC = 300 V turn-off energy loss per pulse VGE = ±15V, Tvj = 125°C, RG = 33 Ohm Eoff - 1 - mWs L S = 75 nH Kurzschlußverhalten tP ≤ 10µs, VGE ≤ 15V, RG = 33 Ohm SC Data Tvj≤125°C, VCC = 360 V ISC - 120 - A dI/dt = 1800 A/µs 2(11) DB-PIM-9.xls |
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