SC20120PT datasheet(1/5 Pages) JINGHENG

Part #	SC20120PT

Description	Silicon Carbide Schottky Diode

PDF	5 Pages

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Manufacturer	JINGHENG [Jinan Jing Heng Electronics Co., Ltd.]

Direct Link	http://www.jinghenggroup.com/

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R

SC20120PT

Silicon Carbide Schottky Diode

Reverse Voltage - 1200 Volts

Forward Current - 20.0Amperes

FEATURES

S

E

M

I

C

O

N

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JINAN JINGHENG ELECTRONICS

CO., LTD.

HTTP

://WWW.JINGHENG.CN

TYPICAL APPLICATIONS

5-1

SiC Schottky Diode has no switching loss,provides improved

system efficiency against Si diodes by utilizing new semiconductor

material-Silicon Carbide,enables higher operating frequency,

and helps increasing power density and reduction of system

size /cost.Its high reliability ensures robust operation during

surge or over_voltage conditions.

DESCRIPTION

Max Junction Temperature 175°C

High Surge Current Capacity

Positive Temperature Coefficient

Ease of Paralleling

No Reverse Recovery/No Forward Recovery

MECHANICAL DATA

Case: JEDEC TO-247AB

Molding compound meets UL94V-0 flammability rating

Terminals: Lead solderable per J-STD-002 and JESD22-B102

Polarity: As marked

Mounting Torque: 10 in-Ibs maximum

General Purpose

SMPS, Solar inverter, UPS

Power Switching Circuits

Type

V

D C

I

F

Qc

T ,max

j

Package

SC20120PT

1200V

10A/20A

30nC/60nC

175℃

TO- 247AB

KEY PERFORMANCE AND PACKAGE PARAMETERS( leg/device）

Dimensions in inches and (millimeters)

TO-247AB

0.645(16.4)

0.225(5.7)

0.055(1.4)

0.126(3.2)

0.146(3.7)

0.245(6.2)

30

10

10 TYP.

BOTH SIDES

1 REF.

BOTH SIDES

0.201(5.1)

0.030(0.76)

0.618(15.7)

0.205(5.2)

0.043(1.1)

0.114(2.9)

0.128(3.0)

DIA

0.225(5.7)

0.189(4.8)

0.020(0.51)

1

2

3

0.795(20.2)

0.840(21.3)

0.775(19.6)

0.800(20.3)

0.083(2.10)

0.074(1.88)

0.098(2.50)

0.089(2.25)

0.087(2.2)

0.075(1.9)

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CASE

1 2 3

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SC20120PT Datasheet(PDF) 1 Page - Jinan Jing Heng Electronics Co., Ltd.

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