BC817S datasheet(1/3 Pages) FS

Part #	BC817S

Description	General Purpose Transistors

PDF	3 Pages

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Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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1 / 3 page

General Purpose Transistors

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V CEO

45

V

Collector–Base Voltage

V CBO

50

V

Emitter–Base Voltage

V EBO

5.0

V

Collector Current — Continuous

I C

500

mAdc

THERMAL CHARACTERISTICS

x

a

M

l

o

b

m

y

S

c

i

t

s

i

r

e

t

c

a

r

a

h

C

Unit

Total Device Dissipation FR– 5 Board, (1)

P D

TA

W

m

5

2

C

°

5

2

=

8

.

1

C

°

5

2

e

v

o

b

a

e

t

a

r

e

D

mW/°C

Thermal Resistance, Junction to Ambient

R θJA

556

°C/W

P

n

o

i

t

a

p

i

s

i

D

e

c

i

v

e

D

l

a

t

o

T

D

Alumina Substrate, (2) TA

W

m

0

3

C

°

5

2

=

4

.

2

C

°

5

2

e

v

o

b

a

e

t

a

r

e

D

mW/°C

Thermal Resistance, Junction to Ambient

R θJA

417

°C/W

Junction and Storage Temperature

T J , T stg

–55 to +150

°C

DEVICE MARKING

BC817S–A = 6A , BC817S-B = H6B , BC817S-C = 6C

ELECTRICAL CHARACTERISTICS (T

A = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = –10 mA)

V (BR)CEO

45

—

V

Collector–Emitter Breakdown Voltage

(VEB = 0, IC = –10

µA)

V (BR)CES

50

—

V

Emitter–Base Breakdown Voltage

(I E = –1.0

µA)

V (BR)EBO

5.0

—

V

I

t

n

e

r

u

C

f

o

t

u

C

r

o

t

c

e

ll

o

C

CBO

(VCB

A

n

0

1

—

)

V

0

2

=

(VCB = 20 V, TA

0

.

5

—

)

C

°

0

5

1

=

µA

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

2

EMITTER

3

COLLECTOR

1

BASE

SOT–23

1

3

2

SEMICONDUCTOR

TECHNICAL DATA

BC817S

2008. 01. 18

1/3

Revision No : 0

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