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BC817U Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # BC817U
Description  General Purpose Transistors
PDF  3 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

BC817U Datasheet(HTML) 2 Page - First Silicon Co., Ltd

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2008. 01. 18
2/3
Revision No : 0
BC817U
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC
V
)
A
m
0
1
–
=
(BR)CEO
45
—
—
V
Collector–Emitter Breakdown Voltage
(VEB = 0, IC = –10 µ
V
)
A
(BR)CES
50
—
—
V
Emitter–Base Breakdown Voltage
( I E = –1.0 µ
V
)
A
(BR)EBO
5.0
—
—
V
I
t
n
e
rr
u
C
ff
o
t
u
C
r
o
t
c
e
ll
o
C
CBO
( VCB
A
n
0
0
1
—
—
)
V
0
2
=
( VCB = 20 V, TA
0
.
5
—
—
)
C
°
0
5
1
=
µA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
h
n
i
a
G
t
n
e
rr
u
C
C
D
FE
(I C= 100 mA, V CE
0
5
2
—
0
0
1
A
–
7
1
8
C
B
)
V
0
.
1
=
0
0
4
—
0
6
1
B
–
7
1
8
C
B
0
0
6
—
0
5
2
C
–
7
1
8
C
B
(I C = 500 mA, V CE
—
—
0
4
)
V
0
.
1
=
Collector–Emitter Saturation Voltage
V CE(sat)
—
—
0.7
V
(I C = 500 mA, I B = 50 mA)
Base–Emitter On Voltage
V BE(on)
—
—
1.2
V
( I C = 500 mA, V CE = 1.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f T
100
—
—
MHz
( I C = 10 mA, V CE = 5.0 V dc, f = 100 MHz)
Output Capacitance
C obo
—
10
—
pF
(V CB = 10 V, f = 1.0 MHz)



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