BC858 datasheet(1/8 Pages) FS

Part #	BC858

Description	General Purpose Transistors

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Manufacturer	FS [First Silicon Co., Ltd]

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General Purpose Transistors

SOT–23

2

EMITT ER

3

CO LLECT O R

1

B ASE

3

xx

MARKING DIAGRAM

xx= Device Marking

(See Table Below)

PNP Silicon

• Moisture Sensitivity Level: 1

• ESD Rating – Human Body Model: >4000 V

– Machine Model: >400 V

•

MAXIMUM RATINGS (TA = 25 C unless otherwise noted)

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

BC856

BC857

BC858, BC859

VCEO

–65

–45

–30

V

Collector-Base Voltage

BC856

BC857

BC858, BC859

VCBO

–80

–50

–30

V

Emitter–Base Voltage

VEBO

–5.0

V

Collector Current – Continuous

IC

–100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5 Board,

(Note 1.) TA = 25 C

Derate above 25 C

PD

225

1.8

mW

mW/ C

Thermal Resistance,

Junction to Ambient

RθJA

556

C/W

Total Device Dissipation Alumina

Substrate, (Note 2.) TA = 25 C

Derate above 25 C

PD

300

2.4

mW

mW/ C

Thermal Resistance,

Junction to Ambient

RθJA

417

C/W

Junction and Storage Temperature

TJ , Tstg

–55 to

+150

C

1. FR–5 = 1.0 x 0.75 x 0.062 in

2. Alumina = 0.4 x 0 3 x 0.024 in. 99.5% alumina.

RoHS requirements.

We declare that the material of product compliance with

2007. 12. 18

1/7

SEMICONDUCTOR

TECHNICAL DATA

BC856 / 857 / 858 / 859S

Revision No : 0

1

3

2

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