IXFT12N50F datasheet(1/2 Pages) IXYS

Part #	IXFT12N50F

Description	HiPerRF Power MOSFETs F-Class: MegaHertz Switching

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 2 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MW

500

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C12

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

48

A

I

AR

T

C

= 25

°C12

A

E

AR

T

C

= 25

°C20

mJ

E

AS

T

C

= 25

°C

300

mJ

dv/dt

I

S

£ I

DM, di/dt £ 100 A/ms, VDD £ VDSS

5

V/ns

T

J

£ 150°C, R

G = 2 W

P

D

T

C

= 25

°C

180

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in.) from case for 10 s

300

°C

M

d

Mounting torque

TO-264

0.4/6 Nm/lb.in.

Weight

TO-247

6

g

TO-264

4

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 250uA

500

V

GS(th)

V

DS = VGS, ID = 2.5 mA

3.0

5.0 V

I

GSS

V

GS = ±20 V, VDS = 0

±100 nA

I

DSS

V

DS = 0.8 • VDSS

50

mA

V

GS = 0 V

T

J

= 125

°C

1 mA

R

DS(on)

V

GS = 10 V, ID = 0.5 • ID25

0.4

W

Note 1

98737 (07/00)

Advanced Technical Information

HiPerRFTM

Power MOSFETs

F-Class: MegaHertz Switching

N-ChannelEnhancementMode

Avalanche Rated, Low Q

g, Low Intrinsic Rg

High dV/dt, Low t

rr

Features

l RF capable MOSFETs

l Double metal process for low gate

resistance

l Low R

DS (on) HDMOS

TM process

l Rugged polysilicon gate cell structure

l Unclamped Inductive Switching (UIS)

rated

l Low package inductance

- easy to drive and to protect

l Fast intrinsic rectifier

Applications

l DC-DC converters

l Switched-mode and resonant-mode

power supplies, >500kHz switching

l DC choppers

l 13.5 MHz industrial applications

l Pulse generation

l Laser drivers

l RF amplifiers

Advantages

l Space savings

l High power density

TO-247 AD (IXFH)

(TAB)

G = Gate,

D = Drain,

S = Source,

TAB = Drain

TO-268 (IXFT) Case Style

(TAB)

G

S

V

DSS

= 500 V

I

D25

=

12 A

R

DS(on)

= 0.4

W

t

rr £ 250 ns

IXFH 12N50F

IXFT 12N50F

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