SCHOTTKY BARRIER DIODE

1

2

Cathode

Anode

SEMICONDUCTOR

TECHNICAL DATA

FDR54E

2013. 6. 26

1/3

Revision No : 0

SOD- 523

2

1

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low forward volt-

age reduces conduction loss. Miniature surface mount package is excellent for

hand held and portable applications where space is limited.

• Extremely Fast Switching Speed

• Device Marking: JV

ORDERING INFORMATION

We declare that the material of product

compliance with RoHS requirements.

FDR54E

JV

3000/Tape & Reel

Device

Marking

Shipping

t

i

n

U

e

u

l

a

V

l

o

b

m

y

S

g

n

i

t

a

R

V

e

g

a

t

l

o

V

e

s

r

e

v

e

R

R

30

V

THERMALCHARACTERISTICS

t

i

n

U

x

a

M

l

o

b

m

y

S

c

i

t

s

i

r

e

t

c

a

r

a

h

C

Total Device Dissipation FR-5 Board,*

200

mW

C

°

/

W

m

7

5

.

1

C

°

5

2

e

v

o

b

a

e

t

a

r

e

D

Thermal Resistance Junction to Ambient

635

°C/W

Junction Temperature

stg

125

°C

* FR-4 Minimum Pad

t

i

n

U

x

a

M

p

y

T

n

i

M

l

o

b

m

y

S

c

i

t

s

i

r

e

t

c

a

r

a

h

C

µA)

30

—

—

Volts

——

10

pF

I

)

V

5

2

=

R

—

0.5

2.0

µAdc

V

)

c

d

A

m

1

.

0

=

F

—

0.22

0.24

Vdc

V

)

c

d

A

m

0

.

1

=

F

—

0.29

0.32

Vdc

—

0.35

0.40

Vdc

V

)

c

d

A

m

0

3

=

F

—

0.41

0.5

Vdc

V

)

c

d

A

m

0

0

1

=

F

—

0.52

1.0

Vdc

Reverse Recovery Time

—

—

5.0

ns

I

)

C

D

(

t

n

e

r

r

u

C

d

r

a

w

r

o

F

F

—

—

200

mAdc

I

t

n

e

r

r

u

C

d

r

a

w

r

o

F

k

a

e

P

e

v

i

t

i

t

e

p

e

R

FRM

—

—

300

mAdc

Non–Repetitive Peak Forward Current (t < 1.0 s)

—

—

600

mAdc

Storage Temperature

T

-40 to +125

°C