SEMICONDUCTOR

TECHNICAL DATA

FDR54SE

2013. 6. 26

1/3

Revision No : 0

°C unless otherwise noted)

Rating

Symbol

Value

Unit

Reverse Voltage

VR

30

Volts

Forward Power Dissipation

@ TA = 25℃

PD

150

mW

Forward Current (DC)

IF

200 Max

mA

Junction Temperature

TJ

125 Max

°C

Storage Temperature Range

Tstg

– 55 to +150

°C

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage (IR = 10

µA)

V(BR)R

30

—

—

Volts

Total Capacitance (VR = 1.0 V, f = 1.0 MHz)

CT

—

—

10

pF

Reverse Leakage (VR = 25 V)

IR

—

0.5

2.0

µAdc

Forward Voltage (IF = 0.1 mAdc)

VF

—

0.22

0.24

Vdc

Forward Voltage (IF = 30 mAdc)

VF

—

0.41

0.5

Vdc

Forward Voltage (IF = 100 mAdc)

VF

—

0.52

1.0

Vdc

Reverse Recovery Time

(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1

trr

—

—

5.0

ns

Forward Voltage (IF = 1.0 mAdc)

VF

—

0.29

0.32

Vdc

Forward Voltage (IF= 10 mAdc)

VF

—

0.35

0.40

Vdc

Forward Current (DC)

IF

—

—

200

mAdc

Repetitive Peak Forward Current

IFRM

—

—

300

mAdc

Non–Repetitive Peak Forward Current (t < 1.0 s)

IFSM

—

—

600

mAdc

3

CATHODE/ANODE

ANODE

1

CATHODE

2

These Schottky barrier diodes are designed for high speed switching applications,

circuit protection, and voltage clamping. Extremely low forward voltage reduces

conduction loss. Miniature surface mount package is excellent for hand held and

portable applications where space is limited.

• Extremely Fast Switching Speed

• Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc

Barrier Diodes

Dual Series Schottky

•

Device

Marking

Shipping

ORDERING INFORMATION

We declare that the material of product

compliance with RoHS requirements.

FDR54SE

L4

3000/Tape&Reel

SC-523