SEMICONDUCTOR

TECHNICAL DATA

FDR301

2011. 10. 17

1/3

Revision No : 0

Rating

symbol

value

unit

Reverse Voltage

30

Volts

Forward Power Dissipation

W

m

0

0

2

0

8

2

C

°

5

2

=

A

T

@

C

°

/

W

m

0

.

2

8

.

2

C

°

5

2

e

v

o

b

a

e

t

a

r

e

D

Operating Junction

°C

5

2

1

+

o

t

5

5

–

e

g

n

a

R

e

r

u

t

a

r

e

p

m

e

T

Storage Temperature Range

–55 to +150

°C

DEVICE MARKING

FDR301 = 4T

Characteristic

Symbol

Min

Typ

Max

Unit

30

—

—

Volts

—

0.9

1.5

pF

—

13

200

Forward Voltage(IF=1.0mAdc)Figure4

—

0.38

0.45

Vdc

Forward Voltage(IF=10mAdc)Figure4

—

0.52

0.6

Vdc

Silicon Hot–Carrier Diodes

Schottky Barrier Diodes

3

CATHODE

1

ANODE

These devices are designed primarily for high–efficiency UHF and VHF detector

applications.They are readily adaptable to many other fast switching RF and digital

applications.They are supplied in an inexpensive plastic package for low–cost,

high–volume consumer and industrial/commercial requirements.They are also

available in a Surface Mount package.

R

=13 nAdc(Typ)

• We declare that the material of product

compliance with RoHS requirements.

SOT –23

1

3

2