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FDR715U Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FDR715U Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 3 page ![]() SEMICONDUCTOR TECHNICAL DATA FDR715U 2013. 05. 08 1/3 Revision No : 0 1 3 2 SOT-323 3 CATHODE ANODE 1 ANODE 2 ORDERING INFORMATION Device Marking Shipping FDR715U 3D 3000/Tape & Reel Dual Series Schottky Barrier Diodes 4.We declare that the material of product compliance with RoHS requirements. Applications General purpose detection High speed switching Features 1. Small surface mounting type. 2. Low VF and low IR 3. High reliability Absolute maximum ratings (Ta=25 °C) Parameter Symbol Limits Unit Peak reverse voltage VRM 40 V DC reverse voltage VR 40 V Mean rectifying current IO 30 mA Peak forward surge current� IFSM 200 mA Junction temperature Tj 125 °C Storage temperature Tstg °C −40~ +125 � 60 Hz for 1 Electrical characteristics (Ta=25 °C) Note) ESD sensitive product handling required. Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF − − 0.37 V IF =1mA Reverse current IR − − 1 µA VR =10V Capacitance between terminals − 2.0 − pF VR =1V, f=1MHz CT |
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