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FDS56U Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FDS56U Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 3 page ![]() 2011. 11. 15 1/3 SEMICONDUCTOR TECHNICAL DATA FDS56U Revision No : 0 DEVICE MARKING FDS56U = A1 MAXIMUM RATINGS (TA = 25°C) t i n U x a M l o b m y S g n i t a R V g a t l o V e s r e v e R R 70 Vdc I t n e r r u C d r a w r o F F 200 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc THERMAL CHARACTERISTICS x a M l o b m y S c i t s i r e t c a r a h C Unit Total Device Dissipation FR–5 Board(1) PD 200 mW TA = 25°C C ° / W m 6 . 1 C ° 5 2 e v o b a e t a r e D R t n e i b m A o t n o i t c n u J , e c n a t s i s e R l a m r e h T θJA 0.625 °C/W P n o i t a p i s s i D e c i v e D l a t o T D 300 mW Alumina Substrate(2) TA = 25°C C ° / W m 4 . 2 C ° 5 2 e v o b a e t a r e D R t n e i b m A o t n o i t c n u J , e c n a t s i s e R l a m r e h T θJA 417 °C/W T e r u t a r e p m e T e g a r o t S d n a n o i t c n u J J, Tstg –55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) t i n U x a M n i M l o b m y S c i t s i r e t c a r a h C OFF CHARACTERISTICS V e g a t l o V n w o d k a e r B e s r e v e R (BR) 70 — Vdc (I(BR) = 100 µAdc) Reverse Voltage I t n e r r u C e g a k a e L R µAdc (VR = 25 Vdc, TJ 0 3 — ) C ° 0 5 1 = (VR 5 . 2 — ) c d V 0 7 = (VR = 70 Vdc, TJ 0 5 — ) C ° 0 5 1 = C e c n a t i c a p a C e d o i D D — 2.0 pF (VR = 0, f = 1.0 MHz) V e g a t l o V d r a w r o F F mVdc (IF 5 1 7 — ) c d A m 0 . 1 = (IF 5 5 8 — ) c d A m 0 1 = (IF 0 0 0 1 — ) c d A m 0 6 = (IF 0 5 2 1 — ) c d A m 0 5 1 = t e m i T y r e v o c e R e s r e v e R rr — 6.0 ns (IF = IR = 10 mAdc, RL = 100 Ω, IR(REC) = 1.0 mAdc) (Figure 1) 1. FR–5 = 1.0 × 0.75 × 0.062 in. 2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina. Dual Switching Diodes Ordering Information Device Marking Shipping FDS56U A1 3000/Tape&Reel Features • We declare that the material of product compliance with RoHS requirements. SC-70 / SOT-323 3 2 1 3 ANODE CATHODE 1 2 CATHODE |
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