UMC3N datasheet(2/5 Pages) FS

2 / 5 page

2012. 08. 30

2/5

Revision No : 0

UMC3N

OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = 50 V, IE = 0)

ICBO

−

100

nAdc

Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0)

ICEO

−

500

nAdc

Emitter-Base Cutoff Current (VEB = 6.0, IC = 0 mA)

IEBO

−

0.5

mAdc

ON CHARACTERISTICS

Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0)

V(BR)CBO

−

Vdc

Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0)

V(BR)CEO

−

Vdc

DC Current Gain (VCE = 10 V, IC = 5.0 mA)

hFE

−

Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)

VCE(SAT)

−

0.25

Vdc

Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k )

VOL

−

0.2

Vdc

Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k )

VOH

4.9

−

Vdc

Input Resistor

7.0

Resistor Ratio

R1/R2

0.8

1.0

1.2

Electrical Characteristics (T

A = 25°C)

Q1 Transistor:PNP

OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = 50 V, IE = 0)

ICBO

−

100

nAdc

Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0)

ICEO

−

500

nAdc

Emitter-Base Cutoff Current (VEB = 6.0, IC = 0 mA)

IEBO

−

0.5

mAdc

ON CHARACTERISTICS

Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0)

V(BR)CBO

−

Vdc

Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0)

V(BR)CEO

−

Vdc

DC Current Gain (VCE = 10 V, IC = 5.0 mA)

hFE

−

Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)

VCE(SAT)

−

0.25

Vdc

Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k )

VOL

−

0.2

Vdc

Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k )

VOH

4.9

−

Vdc

Input Resistor

7.0

Resistor Ratio

R1/R2

0.8

1.0

1.2

Q2 Transistor:NPN

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