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FDR520F Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FDR520F Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 4 page  SEMICONDUCTOR TECHNICAL DATA FDR520F 2012. 05. 22 1/4 Revision No : 0 SCHOTTKY BARRIER DIODE Applications Low current rectification Features Extremelysmall surface mounting type. (SOD923) Low High reliability. Construction Silicon epitaxial planar 1 2 Cathode Anode SOD923 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping FDR520F We declare that the material of product compliance with RoHS requirements. IR. E Absolute maximum ratings (Ta=25 °C) Symbol Unit VR V Io mA Electrical characteristic (Ta=25 °C) Symbol Min. Typ. Max. Unit VF - - 0.45 V IF=10mA IR - 0.5 µA VR=10V Conditions Reverse current Parameter Forward vpltage I 500 FSM mA Tj ℃ Tstg ℃ Parameter ard current -40 to +125 Limits 30 100 Forward current surge peak （60Hz・1cyc） 125 Reverse voltage (DC) Average rectifierd forw Junction temperature Storage temperature F - - 0.50 V orward vpltage F V IF=20mA 8000/Tape&Reel 2 1 |
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