C106M datasheet(1/2 Pages) FS

Part #	C106M

Description	Silicon Planar PNPN Thyristor (4A SCR)

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

Logo

1 / 2 page

SEMICONDUCTOR

TECHNICAL DATA

C106B/D/M

2015. 02. 06

1/2

Revision No : 0

Silicon Planar PNPN Thyristor (4A SCR)

DESCRIPTION

Thyristor in a TO-126F Plastic Package.

FEATURES

The consumption level provide reliable applications,

such as temperature, lighting, speed, etc.

APPLICATIONS

Applied to high Voltage control circuit.

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Gate

Cathode

Symbol

○

Anode

Absolute Maximum Ratings(Ta=25

℃)

Parameter

Symbol

Test Conditions

Rating

Unit

Repetitive peak off-state

voltages

VDRM，

VRRM

RGK=1K

TC=-40~110℃

C106B

C106D

C106M

200

400

600

V

RMS on-state current

IT(RMS)

TC=80℃

A

4

Average on-state current

IT(AV)

TC=80℃

A

5

.

2

Non-repetitive peak on-state

current

ITSM

1/2 Cycle, Sine Wave,60Hz,

TJ=110℃

20

A

I

2

t

I

g

n

i

s

u

f

r

o

f

2

A

5

6

.

1

s

m

3

.

8

=

t

2S

Peak gate power

PGM

TC=80℃

W

m

0

5

Peak Average power

PG(AV)

TC=80℃

W

m

0

1

Peak gate current

IGM

TC=80℃

A

2

.

0

Junction Temperature

Tj

-40～+110

℃

Storage Temperature Range

Tstg

-40～+150

℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Repetitive peak off-state

current

IDRM,

IRRM

VAK=Rated VDRM or

VRRM

RGK=1K

Ω

Tc =25℃

10

μA

Tc=110℃

100

On-state voltage

VTM

ITM=4.0A

tp=380uS

2.2

V

Gate trigger current

IGT

VAK=6.0Vdc

RL=100

Ω

Tc =25℃

15

200

μA

Tc=-40℃

35

500

Gate trigger voltage

VGT

VAK=6.0Vdc

RL=100

Ω

Tc =25℃

0.4

0.60

0.80

V

Tc =-40℃

0.5

0.75

1.00

Holding current

I H

VAK=12.0Vdc

RGK=1K

Ω

Tc =25℃

0.19

3.0

mA

Tc =-40℃

0.33

6.0

Tc=110℃

0.07

2.0

Latching current

I L

VAK=12.0Vdc

IG=20mA

Tc =25℃

0.20

5.0

mA

Tc =-40℃

0.35

7.0

Critical rate of rise of

off-state voltage

dv/dt

VAK=Rated VDRM, RGK=1K

Ω

TC=110℃

8.0

V/us

1 Cathode

2 ANODE

3 GATE

TO-126F

A

B

DIM

MILLIMETERS

8.3 MAX

A

B

11.3±0.3

C

4.15 TYP

D

3.2±0.2

E

2 0±0.2

F

2 8±0.1

G

3.2±0.1

G

H

1.27±0.1

I

1.40±0.1

K

15.5±0.2

L

0.76±0.1

M

2.28 TYP

O

P

O

4.56±0.1

P

0 6 MAX

1

2

3

Similar Part No. - C106M

Manufacturer	Part #	Datasheet	Description
Motorola, Inc	C106M	98Kb / 4P	SCRs 4 AMPERES RMS 50 thru 600 VOLTS
ON Semiconductor	C106M	62Kb / 6P	Sensitive Gate Silicon Controlled Rectifiers August, 2005 ??Rev. 8
GE Solid State	C106M	37Kb / 1P	4-A Sensitive-Gate Silicon Controlled Rectifiers
Tiger Electronic Co.,Lt...	C106M	57Kb / 1P	Thyristors logic level
Central Semiconductor C...	C106M	82Kb / 2P	4.0A SENSITIVE GATE SILICON CONTROLLED RECTIFIER 200 THRU 600 VOLTS

More results

Similar Description - C106M

Manufacturer	Part #	Datasheet	Description
Jiangsu Changjiang Elec...	PCR0.6	525Kb / 3P	Silicon Planar PNPN Thyristor
First Silicon Co., Ltd	C106DB	511Kb / 2P	Silicon Planar PNPN Thyristor (4A SCR)
	C106M-Z	558Kb / 2P	Silicon Planar PNPN Thyristor (4A SCR)
	MCR100-8S	424Kb / 3P	Silicon Planar PNPN Thyristor
	TYN610	239Kb / 2P	Silicon Planar PNPN Thyristor (10A SCR)
	TYN610F	316Kb / 2P	Silicon Planar PNPN Thyristor (10A SCR)
	CP10C60	316Kb / 2P	Silicon Planar PNPN Thyristor (12A SCR)
	TYNA616	142Kb / 3P	Silicon Planar PNPN Thyristor (16A SCR)
	MCR703A	550Kb / 2P	Silicon Planar PNPN Thyristor (4A SCR) 2022. 03. 29 Revision No : 0
	MCRP8PA-6V	276Kb / 4P	Silicon Planar PNPN Thyristor (0.8A SCR) 2022. 04. 06 Revision No : 0

More results

C106M Datasheet(PDF) 1 Page - First Silicon Co., Ltd

C106M Datasheet(HTML) 1 Page - First Silicon Co., Ltd

Similar Part No. - C106M

Similar Description - C106M

Html Pages

1 2

Datasheet Download

Link URL