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SI7201 Datasheet(PDF) 4 Page - Silicon Laboratories |
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SI7201 Datasheet(HTML) 4 Page - Silicon Laboratories |
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4 / 31 page ![]() Parameter Symbol Test Condition Min Typ Max Unit Current Consumption Average power depends on the sample rate and percent of time spent sampling versus sleep mode or idle mode. See the ordering guide for average power calcula- tions for specific devices. IDD Sleep timer enabled average at VDD = 3.3 V and 200 msec sleep time 0.4 μA Sleep mode VDD = 3.3 V, T = 25 °C VDD = 3.3 V, T = 70 °C VDD = 5.5 V, T = 125 °C 50 1000 5000 nA nA nA Conversion in progress VDD = 1.8V VDD = 3.3 V VDD = 5.5 V 3.5 5 6.8 5.5 6 8.0 mA Conversion in progress high volt- age parts VDD = 3.3 to 26.5 V 6.5 8.5 mA Idle mode low voltage parts VDD = 1.71 to 5.5 V 0.6 1 mA Idle mode high voltage parts VDD = 3.3 to 26.5 V 0.9 1.2 mA Conversion Time TCONV First conversion when waking from sleep or idle 11 µs Additional conversions in a burst 8.8 µs Sample Rate FSAMPLE Parts can be configured for sleep or idle between samples. Sleep is lower power, but the fastest sam- pling rate is 8 kHz. Idle allows sam- pling rate to be configured to be as high as 113 kHz. See the ordering guide for details. - Wake Up Time TWAKE Time from VDD > 1.71 V to first measurement 1 msec Note: 1. TAMPERb and DIS pin specifications apply when the pin is present (Si7203/4). 2. Idle time can be factory programmed from 13.2 μsec to 206 msec ±10% or set to zero in which case conversions are done every 8.8 μsec. Normally idle time is only used at higher sample speeds. 3. For high voltage parts (VDD = 26.5 V maximum), the power on ramp should be faster than 10 V per second in the start-up region from 2 to 3 V. Si720x Switch/Latch Hall Effect Magnetic Position Sensor Data Sheet Electrical Specifications silabs.com | Building a more connected world. Rev. 1.2 | 4 |
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