PCF7936AS datasheet(27/32 Pages) PHILIPS

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NXP Semiconductors

Product Specification

Security Transponder (HITAG2)

PCF7936AS

2010 May 04

CONFIDENTIAL

10 DEVICE CHARACTERISTICS

10.1 Electrical Characteristics

Tamb = -40 to +85°C, fSYS = 125kHz, TO = 1/fSYS. Unless otherwise specified

SYMBOL

PARAMETER

CONDITION

MIN

TYP

MAX

UNIT

Operating Conditions

fRES

Resonance frequency

121

129

kHz

Bandwidth

2.3

kHz

BTHR

Magnetic flux density,

Read direction

400

μT

BPRG

Magnetic flux density, Note 1

For EEPROM programming

m = 0,95, TWRP = 8 TO

400

μT

BAUT

Magnetic flux density, Note 1

For device authentication

m = 0,95, TWRP = 8 TO

400

μT

BREAD

LF field absorption in read direction, Note 1

BFIELD = 35 μTPP

μT

MIPRG

Minimum modulation index (m), Note 1

Write direction, device programming and

authentication

BFIELD = 35 μTPP, TWRP = 8 TO

EEPROM

TRET

Data retention time

Tamb = 50°C

years

NWR-CYL

Write endurance, page 1 to 7

100 k

cycle

Note

1. Modulation index (m) and LF Field absorption (BREAD) are defined according to Figure 25.

2. Parameters are measured with the Scemtech test equipment STM-1 in a Helmholtz arrangement according to section 11.

Transponder

LF Field

BMIN

BMAX - BMIN

m =

BMAX + BMIN

BMAX

BREAD = BMAX - BMIN

Figure 25. Definition of modulation index (m) and LF field absorption (BREAD)

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