This Common Cathode Silicon Epitaxial Planar Dual Diode is

designed for use in ultra high speed switching

applications. This

device is housed in the SC–89 package which is designed for low

power surface mount applications, where board space is at a premium.

D

MAXIMUM RATINGS (TA = 25 °C)

Rating

Symbol

Value

Unit

Reverse Voltage

VR

80

Vdc

Peak Reverse Voltage

VRM

80

Vdc

Forward Current

IF

100

mAdc

Peak Forward Current

IFM

300

mAdc

Peak Forward Surge Current

IFSM(1)

2.0

Adc

THERMAL CHARACTERISTICS

Rating

Symbol

Max

Unit

Power Dissipation

P D

150

mW

Junction Temperature

TJ

150

C

Storage Temperature Range

Tstg

–55 to +150

C

1. t = 1 µS

Characteristic

Symbol

Condition

Min

Max

Unit

Reverse Voltage Leakage Current

IR

VR = 70 V

—

0.1

µAdc

Forward Voltage

VF

IF = 100 mA

—

1.2

Vdc

Reverse Breakdown Voltage

VR

IR = 100 µA

80

—

Vdc

Diode Capacitance

VR = 6.0 V, f = 1.0 MHz

—

3.5

pF

Reverse Recovery Time

trr(2)

IF = 5.0 mA, V R = 6.0 V, R L = 100 Ω, Irr = 0.1 I R

—

4.0

ns

2. trr Test Circuit on following page.

FDS222T1G=N

Driver Marking

3

CATHODE

1

ANODE

2

ANODE

Common Cathode Silicon

Dual Switching Diode

Ordering Information

Device

Marking

Shipping

FDS222T1G

N

3000/Tape&Reel

FDS222T3G

N

10000/Tape&Reel

2008. 4. 23

1/3

SEMICONDUCTOR

TECHNICAL DATA

FDS222

Revision No : 0

1

3

2

SC-89