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FDS356 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FDS356 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 3 page  SC-76 / SOD-323 USC 2 2 ANODE 1 CATHODE 1 2012. 02. 17 1/3 SEMICONDUCTOR TECHNICAL DATA FDS356 Revision No : 0 Band Switching Diode Applications High frequency switching Features 1) Small surface mounting type. 2) High reliability. Construction Silicon epitaxial planar Drivece Marking FDS356 = B 3) We declare that the material of product compliance with RoHS requirements. Absolute maximum ratings (Ta=25℃) Parameter Symbol Limits Unit DC reverse voltage VR 35 V DC forward current IF 100 mA Junction temperature Tj 125 °C Storage temperature Tstg -55~+125 °C Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF – – 1.0 V IF=10mA Reverse current IR – – 10 nA VR=25V Capacitance between terminals CT – – 1.2 pF VR=6V, f =1MHz Forward operating resistance rF – – 0.9 Ω IF=2mA, f =100MHz Ordering Information Device Marking Shipping FDS356 B 3000/Tape&Reel |
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