FDS3907

2017. 07. 18

1/4

SEMICONDUCTOR

TECHNICAL DATA

Revision No : 0

30V P-Channel MOSFETs

BVDSS

RDSON

ID

-30V

20mΩ

-9.2A

These P-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

General Description

Applications

Thermal Characteristics

SOP8 Pin Configuration

D

G

S

D

D

D

D

G

S

S

S

Features

� Fast switching

� Green Device Available

� MB / VGA / Vcore

� POL Applications

� Load Switch

� LED Application

Symbol

Parameter

Rating

Units

Drain-Source Voltage

V

Gate-Source Voltage

± 20

V

-9.2

A

-5.1

A

Drain Current – Pulsed

1

-50

A

2.1

W

Power Dissipation – Derate above 25℃

0.017

W/℃

Storage Temperature Range

-55 to 150

℃

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

Thermal Resistance Junction to ambient

---

60

℃/W