FFB3904D datasheet(2/8 Pages) FS

2 / 8 page

ELECTRICAL CHARACTERISTICS (TA =25℃ unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (2)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

–

Vdc

Collector–Base Breakdown Voltage

(IC = 10 Adc, IE = 0)

V(BR)CBO

–

Vdc

Emitter–Base Breakdown Voltage

(IE = 10 Adc, IC = 0)

V(BR)EBO

6.0

–

Vdc

Base Cutoff Current

(VCE = 30 Vdc, V EB = 3.0 Vdc)

IBL

–

nAdc

Collector Cutoff Current

(VCE = 30 Vdc, V EB = 3.0 Vdc)

ICEX

–

nAdc

ON CHARACTERISTICS (2)

DC Current Gain

(IC = 0.1 mAdc, V CE = 1.0 Vdc)

(IC = 1.0 mAdc, V CE = 1.0 Vdc)

(IC = 10 mAdc, V CE = 1.0 Vdc)

(IC = 50 mAdc, V CE = 1.0 Vdc)

(IC = 100 mAdc, V CE = 1.0 Vdc)

hFE

100

–

300

–

Collector–Emitter Saturation Voltage

(IC = 10 mAdc, I B = 1.0 mAdc)

(IC = 50 mAdc, I B = 5.0 mAdc)

VCE(sat)

–

0.2

0.3

Vdc

Base–Emitter Saturation Voltage

(IC = 10 mAdc, I B = 1.0 mAdc)

(IC = 50 mAdc, I B = 5.0 mAdc)

VBE(sat)

0.65

–

0.85

0.95

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain – Bandwidth Product

(IC = 10 mAdc, V CE = 20 Vdc, f = 100 MHz)

300

–

MHz

Output Capacitance

(VCB = 5.0 Vdc, I E = 0, f = 1.0 MHz)

Cobo

–

4.0

Input Capacitance

(VEB = 0.5 Vdc, I C = 0, f = 1.0 MHz)

Cibo

–

8.0

2. Pulse Test: Pulse Width

≤ 300 µs; Duty Cycle ≤2.0%.

2008. 03. 10

2/8

FFB3904D

Revision No : 0

FFB3904D Datasheet(PDF) 2 Page - First Silicon Co., Ltd

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