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BUV50 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BUV50
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUV50 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUV50 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUV50 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
BUV50
DESCRIPTION
·
High Current Capability
·
Low Collector Saturation Voltage-
: VCE(sat)= 0.8V (Max.) @IC= 10A
·
High Switching Speed
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for high current, high speed, high power
applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage
(VBE= -1.5V)
250
V
VCEO
Collector-Emitter Voltage
125
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
25
A
ICM
Collector Current-Peak
50
A
IB
Base Current-Continuous
6
A
IBM
Base Current-peak
12
A
PC
Collector Power Dissipation
@TC=25℃
150
W
Tj
Junction Temperature
200
℃
Tstg
Storage Temperature Range
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.17
℃
/W


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