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LD411660 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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LD411660 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 LD411660 Standard Rectifier Diode FEATURES · Low leakage current · Low forward voltage drop · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VR Repetitive Peak Reverse Voltage 1600 V IF(AV) Average Forward Current TC=100℃ 600 A IFSM Surge Forward Current t=10ms,50Hz,sine 18000 A I2t I2t for Fusing for One Cycle 1650000 A2S TJ Junction Temperature -40~125 ℃ Tstg Storage Temperature Range -40~125 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.08 ℃ /W ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX UNIT VF Forward Voltage drop IF= 1500A, TJ= 25℃ 1.18 V IR Instantaneous Reverse Current VR=VRRM, TJ= 150℃ 40 mA |
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