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2N3866 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N3866 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  1 isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Planar Epitaxial OverlayTransistor 2N3866 DESCRIPTION · High Gain Bandwidth Product fT= 500 MHz (Min.) · Low Collector Capacitance; CC = 3 pF Max. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in output, driver or pre-driver stagesin VHF and UHF equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 55 V VCER Collector-Emitter Voltage RBE= 10Ω 55 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 3.5 V IC Collector Current-Continuous 0.4 A PC Collector Power Dissipation @TC=25℃ 3.5 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~+200 ℃ |
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