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L9929

Figure 16. Application examples for Overvoltage- and Reverse-Voltage Protection

6

ESD-SOLIDITY

The connection pins of the IC have to be protected against Electrostatic Discharge ESD) by suitable integrated

protection structures.

C = 100pF and R2 = 1,5k

Ω (330Ω for OUT1 and OUT2).

Thereby any defect or destruction of the integrated circuit must not occur.

The protection structures realized to reach the ESD-strength have to be coordinated.

The ESD-strength has to be verified by the test circuit given as below.

Figure 17.

For the Pins 4, 5, 6, 7, 14 and 15

Ω

Ω

C = 100pF

Number of pulses each pin: 18

Frequency: 1Hz

Arrangement and performance:

The requirements of MIL883D Methode 3015 have to be fulfilled.

H-BRIDGE

H-BRIDGE

Version 1 REVERSE POLARITY PROTECTION VIA MAIN RELAIS

Version 2 REVERSE POLARITY PROTECTION VIA ACTIVE DIODE

MAIN

RELAIS

IGNITION

SWITCH

BATTERY

BATTERY

D01AT483

=

V

R1

R2

S2

S1

C

OUT

S3

(1)

DC-

VOLTMETER

(2)

D01AT484