PRMD2 datasheet(5/14 Pages) NEXPERIA

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Nexperia

PRMD2

50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET)

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor, for the PNP transistor with negative polarity

VCE = 30 V; IB = 0 A; Tamb = 25 °C

µA

ICEO

collector-emitter cut-off

current

VCE = 30 V; IB = 0 A; Tj = 150 °C

µA

ICBO

collector-base cut-off

current

VCB = 50 V; IE = 0 A; Tamb = 25 °C

100

IEBO

emitter-base cut-off

current

VEB = 5 V; IC = 0 A; Tamb = 25 °C

180

µA

hFE

DC current gain

VCE = 5 V; IC = 5 mA; Tamb = 25 °C

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C

150

VI(off)

off-state input voltage

VCE = 5 V; IC = 100 µA; Tamb = 25 °C

1.1

0.8

VI(on)

on-state input voltage

VCE = 0.3 V; IC = 5 mA; Tamb = 25 °C

2.5

1.7

bias resistor 1

[1]

15.4

28.6

kΩ

R2/R1

bias resistor ratio

[1]

0.8

1.2

VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;

Tamb = 25 °C

2.5

collector capacitance

VCB = -10 V; IE = 0 mA; ie = 0 mA;

f = 1 MHz; Tamb = 25 °C

VCE = 5 V; IC = 10 mA; f = 100 MHz;

Tamb = 25 °C

[2]

230

MHz

transition frequency

VCE = -5 V; IC = -10 mA; f = 100 MHz;

Tamb = 25 °C

180

MHz

[1] See section "Test information" for resistor calculation and test conditions.

[2] Characteristics of built-in transistor

IC (mA)

10-1

102

006aac794

102

103

hFE

(2)

(3)

(1)

VCE = 5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 3. NPN transistor: DC current gain as a function of

collector current; typical values

VCE (V)

aaa-018665

0.04

0.06

0.02

0.08

0.1

(A)

IB = 0.06 mA

0.12 mA

0.18 mA

0.24 mA

0.30 mA

0.36 mA

0.42 mA

0.54 mA

0.48 mA

0.60 mA

Tamb = 25 °C

Fig. 4. NPN transistor: Collector current as a function

of collector-emitter voltage; typical values

PRMD2

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Product data sheet

14 September 2018

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