PBSS5250TH datasheet(4/14 Pages) NEXPERIA

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Nexperia

PBSS5250TH

50 V, 2 A PNP low VCEsat (BISS) transistor

PBSS5250TH

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Product data sheet

9 August 2017

4 / 14

aaa-026657

-10-1

-10-2

-1

-10

(A)

-10-3

VCE (V)

-10-1

-103

-102

-1

-10

tp = 100 ms

tp = 10 ms

tp = 1 ms

tp = 100 µs

tp = 10 µs

tp = 1 s

DC; FR4 PCB, 4-layer copper, collector

mounting pad 1 cm2

Unless otherwise specified: Tamb = 25 °C; single pulse;

FR4 PCB, single-sided copper, standard footprint

Fig. 2. Safe operating area; junction to ambient; continuous and peak drain currents as a function of collector-

emitter voltage

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

in free air

[1]

417

K/W

[2]

261

K/W

[3]

250

K/W

Rth(j-a)

thermal resistance

from junction to

ambient

[4]

215

K/W

Rth(j-sp)

thermal resistance

from junction to solder

point

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[3] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.

[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.

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