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PMGD175XNE Datasheet(PDF) 4 Page - Nexperia B.V. All rights reserved |
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PMGD175XNE Datasheet(HTML) 4 Page - Nexperia B.V. All rights reserved |
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4 / 16 page ![]() © Nexperia B.V. 2017. All rights reserved Nexperia PMGD175XNE 30 V, Dual N-channel Trench MOSFET PMGD175XNE All information provided in this document is subject to legal disclaimers. Product data sheet 15 April 2016 4 / 16 Tj (°C) - 75 175 125 25 75 - 25 017aaa123 40 80 120 Pder (%) 0 Fig. 1. Normalized total power dissipation as a function of junction temperature Tj (°C) - 75 175 125 25 75 - 25 017aaa124 40 80 120 Ider (%) 0 Fig. 2. Normalized continuous drain current as a function of junction temperature aaa-022576 VDS (V) 10-1 102 10 1 1 10-1 10 ID (A) 10-2 Limit RDSon = VDS/ID DC; Tsp = 25 °C DC; Tamb = 25 °C; drain mounting pad 6 cm2 100 µs tp = 10 µs 1 ms 10 ms 100 ms IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain- source voltage |
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