PMV42ENE datasheet(1/17 Pages) NEXPERIA

Part #	PMV42ENE

Description	30 V, N-channel Trench MOSFET

PDF	17 Pages

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Manufacturer	NEXPERIA [Nexperia B.V. All rights reserved]

Direct Link	https://www.nexperia.com/

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PMV42ENE

30 V, N-channel Trench MOSFET

16 March 2016

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

2. Features and benefits

• Logic level compatible

• Low on-state resistance

• Trench MOSFET technology

• ElectroStatic Discharge (ESD) protection > 1 kV HBM

• Enhanced power dissipation capability of 1 W

3. Applications

• Relay driver

• High-speed line driver

• Low-side loadswitch

• Switching circuits

4. Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

-

30

V

VGS

gate-source voltage

Tj = 25 °C

-20

-

20

V

ID

drain current

VGS = 10 V; Tamb = 25 °C; t ≤ 5 s

[1]

-

5.1

A

Static characteristics

RDSon

drain-source on-state

resistance

VGS = 10 V; ID = 4.4 A; Tj = 25 °C

-

29

36

mΩ

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.

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