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IRF1104LPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF1104LPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page  IRF1104S/LPbF HEXFET® Power MOSFET PD - 95526 l Advanced Process Technology l Ultra Low On-Resistance l Surface Mount (IRF1104S) l Low-profile through-hole (IRF1104L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.9 RθJA Junction-to-Ambient(PCB Mounted,steady-state)** ––– 62 Thermal Resistance °C/W Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
100 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
71 A IDM Pulsed Drain Current
400 PD @TA = 25°C Power Dissipation 2.4 W PD @TC = 25°C Power Dissipation 170 W Linear Derating Factor 1.1 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy
350 mJ IAR Avalanche Current 60 A EAR Repetitive Avalanche Energy 17 mJ dv/dt Peak Diode Recovery dv/dt
5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings FifthGenerationHEXFETsfromInternationalRectifierutilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with thefastswitchingspeedandruggedizeddevicedesignthat HEXFETPowerMOSFETsarewellknownfor,providesthe designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highestpowercapabilityandthelowestpossibleon-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internalconnectionresistanceandcandissipateupto2.0W in a typical surface mount application. The through-hole version (IRF1104L) is available for low- profileapplications. Description 2 D Pak TO-262 S D G 7/20/04 www.irf.com 1 VDSS = 40V RDS(on) = 0.009Ω ID = 100A l Lead-Free |
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