FMMT493 datasheet(2/4 Pages) PJSEMI

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Revision：1.0 Apr-2019

FMMT593

PNP Transistor

Electrical Characteristics

Ratings at 25

℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain Note1

at -VCE = 5 V, -IC = 1 mA

at -VCE = 5 V, -IC = 250 mA

HFE

100

Collector Base Cutoff Current

at -VCB = 100 V

-ICBO

0.1

μA

Emitter Base Cutoff Current

at -VEB = 4 V

-IEBO

0.1

μA

Collector Base Breakdown Voltage

at -IC = 100 μA

-V(BR)CBO

120

Collector Emitter Breakdown Voltage

at -IC = 1 mA

-V(BR)CEO

100

Emitter Base Breakdown Voltage

at -IE = 100 μA

-V(BR)EBO

Collector Emitter Saturation Voltage

at -IC =250 mA, -IB = 25 mA

at -IC = 500 mA, -IB = 50 mA

-VCE(sat)

0.2

Base Emitter Saturation Voltage

at -IC = 500m A, -IC = 50 mA

-VBE(sat)

1.1

Base Emitter Voltage

at -VCE = 5 V, -IB = 1 mA

-VBE(on)

1.0

Transition Frequency

at -VCE = 10 V, -IC = 50 mA, f= 100 MHz

150

MHz

100

300

0.3

Collector Output Capacitance

at -VCB = 10 V, f= 1MHz

Cob

Collector Base Cutoff Current

at -VCE = 100 V

-ICES

0.1

μA

at -VCE = 5 V, -IC = 0.5 A

at -VCE = 5 V, -IC = 1 A

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