MMBT8050 datasheet(1/3 Pages) PJSEMI

Part #	MMBT8050

Description	PNP Transistor

PDF	3 Pages

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Manufacturer	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

Direct Link	http://www.pingjingsemi.com/MainEn/Main.aspx

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MMBT8550

PNP Transistor

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www.pingjingsemi.com

Revision：1.1 Jan-2019

Features



For Switching and Amplifier Applications.



As Complementary Type of the NPN Transistor

MMBT8050 is Recommended.

Absolute Maximum Ratings

Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Value

Unit

Collector Base Voltage

-VCBO

40

V

Collector Emitter Voltage

-VCEO

25

V

Emitter Base Voltage

-VEBO

6

V

Collector Current

-IC

600

mA

Power Dissipation

PD

350

mW

Junction Temperature

TJ

150

℃

Storage Temperature Range

TSTG

-55 to 150

℃

Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at -VCE = 1 V, -IC = 100 mA Current Gain Group

C

D

at -VCE = 1 V, - IC = 500 mA

HFE

100

160

40

-

250

400

-

Collector Base Cutoff Current

at -VCB = 35 V

-ICBO

-

100

nA

Collector Base Breakdown Voltage

At -IC = 10 μA

-V(BR)CBO

40

-

V

Collector Emitter Breakdown Voltage

at -IC = 2 mA

-V(BR)CEO

25

-

V

Emitter Base Breakdown Voltage

at -IE = 100 μA

-V(BR)EBO

6

-

V

Collector Emitter Saturation Voltage

at IC = -500 mA, IB = -50 mA

-VCE(sat)

-

0.5

V

Base Emitter Saturation Voltage

At -IC = 500 mA, -IB = 50 mA

-VBE(sat)

-

1.2

V

Transition Frequency

at -VCE = 5 V, -IC = 10 mA

FT

-

100

-

MHz

SOT-23

(TO-236)

1.Base 2.Emitter 3.Collector

Marking：B9D

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MMBT8050 Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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