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NE698M01 Datasheet(PDF) 2 Page - NEC

Part # NE698M01
Description  NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION
PDF  8 Pages
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

NE698M01 Datasheet(HTML) 2 Page - NEC

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NE698M01
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
5
VCEO
Collector to Emitter Voltage
V
3
VEBO
Emitter to Base Voltage
V
2
IC
Collector Current
mA
10
PT
Total Power Dissipation
mW
30
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Ambient Temperature, TA (
°C) (V)
Base to Emitter Voltage, VBE (V)
Collector to Emitter Voltage, VCE (V)
Collector Current, IC (mA)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
50
20
30
10
0
50
100
150
30 mW
0
10
20
30
40
50
0.5
1.0
VCE = 2 V
25
20
15
10
5
0
1.0
2.0
3.0
200
µA
180
µA
160
µA
140
µA
120
µA
100
µA
80
µA
60
µA
40
µA
IB = 20
µA
500
200
100
50
20
10
12
5
10
20
30
VCE = 2 V
VCE = 1 V
PART NUMBER
ORDER MULTIPLE
PACKAGING
NE698M01-T1
3000
Tape & Reel
ORDERING INFORMATION



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