Note:

1. Operation in excess of any one of these parameters may result

in permanent damage.

SYMBOLS

PARAMETERS

UNITS

RATINGS

Collector to Base Voltage

V

20

Collector to Emitter Voltage

V

12

Emitter to Base Voltage

V

3

Collector Current

mA

100

Total Power Dissipation

mW

TBD

Junction Temperature

°C

150

Storage Temperature

°C

-65 to +150

EXCLUSIVE NORTH AMERICAN AGENT FOR

RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS

CALIFORNIA EASTERN LABORATORIES

• Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279

24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only)

• Internet: http://WWW.CEL.COM

02/10/2000

DATA SUBJECT TO CHANGE WITHOUT NOTICE

NE856M23

DC CURRENT GAIN vs.

COLLECTOR CURRENT

GAIN BANDWIDTH PRODUCT vs.

COLLECTOR CURRENT

1000

10

100

0.01

100

10

1

0.1

f = 2 GHz

8

100

10

1

0

1

2

3

4

5

6

7

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

µA step

200

µA

400

µA

µA

120

0

20

40

60

80

100

14

12

10

8

6

4

2

0

120

0

20

40

60

80

100

01

0.8

0.6

0.4

0.2

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

NF

f = 1 GHz

10

8

20

16

12

8

4

0

100

10

1

0

2

4

6

NOISE FIGURE/ASSOCIATED GAIN vs.

COLLECTOR CURRENT