SSM6K217FE datasheet(3/9 Pages) TOSHIBA

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SSM6K217FE

5. Electrical Characteristics

Electrical Characteristics

5.1.

5.1. Static Characteristics (Unless otherwise specified, T

Static Characteristics (Unless otherwise specified, T

Static Characteristics (Unless otherwise specified, Taaaa = 25

= 25

= 25 



))))

Characteristics

Drain-source breakdown voltage

Drain cut-off current

Gate leakage current

Gate threshold voltage

Drain-source on-resistance

Forward transfer admittance

(Note 1)

(Note 2)

Symbol

V(BR)DSS

V(BR)DSX

IDSS

IGSS

Vth

RDS(ON)

|Yfs|

Test Condition

ID = 1 mA, VGS = 0 V

ID = 1 mA, VGS = -12 V

VDS = 40 V, VGS = 0 V

VDS = 0 V, VGS = ±10 V

VDS = 3 V, ID = 1 mA

ID = 1.0 A, VGS = 8.0 V

ID = 1.0 A, VGS = 4.5 V

ID = 1.0 A, VGS = 4.2 V

ID = 1.0 A, VGS = 3.6 V

ID = 0.5 A, VGS = 2.5 V

ID = 0.2 A, VGS = 1.8 V

VDS = 3 V, ID = 0.2 A

Min



0.5



Typ.



155

165

166

170

190

230

Max



±10

1.2

195

208

211

218

248

400



Unit

µA

mΩ

Note 1: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for

this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be

lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON).

Take this into consideration when using the device.

Note 2: Pulse measurement.

5.2.

5.2. Dynamic Characteristics (Unless otherwise specified, T

Dynamic Characteristics (Unless otherwise specified, T

Dynamic Characteristics (Unless otherwise specified, Taaaa = 25

= 25

= 25 



))))

Characteristics

Input capacitance

Reverse transfer capacitance

Output capacitance

Switching time (turn-on time)

Switching time (turn-off time)

Symbol

Ciss

Crss

Coss

ton

toff

Test Condition

VDS = 10 V, VGS = 0 V,

f = 1 MHz

VDS = 10 V, ID = 0.5 A,

VGS = 0 to 2.5 V, RG = 4.7 Ω

Min



Typ.

130

7.5

Max



Unit

5.3.

5.3. Switching Time Test Circuit

Switching Time Test Circuit

Fig.

Fig. 5.3.1

5.3.1

5.3.1 Switching Time Test Circuit

Switching Time Test Circuit

Fig.

Fig. 5.3.2

5.3.2

5.3.2 Input Waveform/Output Waveform

Input Waveform/Output Waveform

5.4.

5.4. Gate Charge Characteristics (Unless otherwise specified, T

Gate Charge Characteristics (Unless otherwise specified, T

Gate Charge Characteristics (Unless otherwise specified, Taaaa = 25

= 25

= 25 



))))

Characteristics

Total gate charge (gate-source plus gate-drain)

Gate-source charge 1

Gate-drain charge

Symbol

Qgs1

Qgd

Test Condition

VDS = 10 V, ID = 1.8 A,

VGS = 4.2 V

Min



Typ.

1.1

0.18

0.5

Max



Unit

2014-03-12

Rev.1.0

SSM6K217FE Datasheet(PDF) 3 Page - Toshiba Semiconductor

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