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SAV35 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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SAV35 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page ![]() S-AV35 2 04-01-06 ELECTRICAL CHARACTERISTICS (Tc = 25℃, ZG = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Frequency Range frange — 154 — 162 MHz Output Power 1 Po1 32 — — W Power Gain 1 Gp1 35.0 — — dB Total Efficiency ηT 50 — — % Input VSWR VSWRin — — 3.0 — Second Harmonic 2nd HRM VDD = 12.5V VGG = 5V Pi = 10mW ZL = 50Ω — — -30 dB Third Harmonic 3rd HRM — — -30 dB Output Power 2 Po2 20 — — W Power Gain 2 Gp2 VDD = 10.5V, VGG = 5V Pi = 10mW, ZL = 50Ω 33.0 — — dB Load Mismatch — VDD = 15V, Pi = 10mW Po = 32W (VGG = adjust,@ ZL = 50Ω) VSWR LOAD 10: 1 ALL PHASE No Degradation — Stability — VDD = 10.5 to 16.5V, VGG = 0 to 5V Pi = 10mW Po ≦ 32W (VGG = adjust,@ ZL = 50Ω) VSWR LOAD 3: 1 ALL PHASE All spurious output than 60dB below desired signal — Caution ・ This product has intersetting cap. Please pay attention for exceeding stress and foreign matter in your application. And not to take away the cap. ・ Do not break, cut, crush or dissolve chemically. Dispose of this product properly according to law. Do not intermingle with normal industrial or domestic waste. ・ This product is electrostatic sensitivity, please handle with caution. ・ This product is flowed high current for a VDD terminal at both RF ON and RF OFF. And it has large calorific value for high output poer. So please use it within the limit of the maximum rating. The view of the maximum rating of our company, "The absolute maximum ratings are rated values which must not be exceeded during operatin, even for an instant. And it guarantees each item independently. When two items or more of maximum rated items joins a device at once. It becomes the outside of a guarantee. " |
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